Udindo wa sulfure hexafluoride mu silicon nitride etching

Sulfur hexafluoride ndi mpweya wokhala ndi zida zabwino kwambiri zotetezera ndipo nthawi zambiri amagwiritsidwa ntchito pozimitsa arc ndi ma transfoma, mizere yamagetsi yamagetsi, ma transfoma, ndi zina zotero. . Electronic grade high-purity sulfure hexafluoride ndi etchant yabwino yamagetsi, yomwe imagwiritsidwa ntchito kwambiri pankhani yaukadaulo wa microelectronics. Masiku ano, mkonzi wapadera wa gasi wa Niu Ruide Yueyue ayambitsa kugwiritsa ntchito sulfure hexafluoride mu silicon nitride etching ndi mphamvu ya magawo osiyanasiyana.

Timakambirana za SF6 plasma etching SiNx process, kuphatikizapo kusintha mphamvu ya plasma, chiŵerengero cha mpweya wa SF6 / Iye ndikuwonjezera mpweya wa cationic O2, kukambirana za momwe zimakhudzira mlingo wa chitetezo cha SiNx cha TFT, ndi kugwiritsa ntchito ma radiation a plasma The spectrometer imasanthula kusintha kwamtundu uliwonse mu SF6/He, SF6/He/O2 plasma ndi SF6 dissociation rate, ndikuwunika ubale pakati pa kusintha kwa SiNx etching rate ndi kuchuluka kwa mitundu ya plasma.

Kafukufuku apeza kuti mphamvu ya plasma ikawonjezeka, kuchuluka kwa etching kumawonjezeka; ngati kuthamanga kwa SF6 mu plasma kukuwonjezeka, ndende ya F atomu imawonjezeka ndipo imagwirizana bwino ndi etching rate. Kuonjezera apo, mutatha kuwonjezera mpweya wa cationic O2 pansi pa chiwerengero chokhazikika chokhazikika, zidzakhala ndi zotsatira zowonjezera mlingo wa etching, koma mosiyana ndi O2 / SF6 otaya ma ratios, padzakhala njira zosiyanasiyana zomwe zingathe kugawidwa m'magawo atatu. : (1) Kuthamanga kwa O2 / SF6 ndi kochepa kwambiri, O2 ikhoza kuthandizira kupatukana kwa SF6, ndipo mlingo wa etching panthawiyi ndi waukulu kuposa pamene O2 sichiwonjezeredwa. (2) Pamene O2 / SF6 otaya chiŵerengero chachikulu kuposa 0.2 kwa imeneyi ikuyandikira 1, pa nthawi ino, chifukwa cha kuchuluka kwa dissociation wa SF6 kupanga F maatomu, mlingo etching ndi apamwamba; koma nthawi yomweyo, ma atomu a O mu plasma nawonso akuchulukirachulukira ndipo Ndikosavuta kupanga SiOx kapena SiNxO(yx) ndi filimu ya SiNx, ndipo ma atomu a O akachuluka, m'pamenenso ma atomu a F amakhala ovuta kwambiri. etching reaction. Choncho, chiwerengero cha etching chimayamba kuchepa pamene chiwerengero cha O2 / SF6 chili pafupi ndi 1. (3) Pamene chiwerengero cha O2 / SF6 chili chachikulu kuposa 1, chiwerengero cha etching chimachepa. Chifukwa cha kuchuluka kwakukulu kwa O2, ma atomu olekanitsidwa a F amawombana ndi O2 ndi mawonekedwe a OF, omwe amachepetsa kuchuluka kwa ma atomu a F, zomwe zimapangitsa kuchepa kwa kuchuluka kwa etching. Zitha kuwoneka kuchokera ku izi kuti O2 ikawonjezeredwa, chiŵerengero cha O2 / SF6 chiri pakati pa 0.2 ndi 0.8, ndipo mlingo wabwino kwambiri wa etching ukhoza kupezeka.